Research groups such as Osaka Metropolitan University have succeeded in creating transistors by thermally processing a gallium nitride layer bonded to diamond. Gallium nitride transistors are used in mobile phone base stations and the like, but heat generation during operation is a problem, and a large heat dissipation member is indispensable when using them. Diamond has high thermal conductivity and efficiently dissipates heat, so it has higher heat dissipation than transistors made on silicon and can prevent deterioration of the gallium nitride layer.
Research groups such as Osaka Metropolitan University have succeeded in creating transistors by thermally processing a gallium nitride layer bonded to diamond. Gallium nitride transistors are used in mobile phone base stations and the like, but heat generation during operation is a problem, and a large heat dissipation member is indispensable when using them. Diamond has high thermal conductivity and efficiently dissipates heat, so it has higher heat dissipation than transistors made on silicon and can prevent deterioration of the gallium nitride layer. In September 2021, the research group directly bonded gallium nitride and diamond and proved that it can withstand heat treatment at 1000 ° C. This time, we succeeded in creating a transistor with excellent heat dissipation performance by heat-treating gallium nitride directly bonded to diamond at 800 ° C. There have been many studies on making transistors and then joining them with diamonds, but it was difficult to increase the area of transistors. The success of joining gallium nitride and diamond before making a transistor has increased the likelihood that gallium nitride transistors can be used in high-power applications such as radar and inverters. The research results were published online in "Applied Physics Express" on March 8.(Sasada)
[Read this article at MIT Technology Review]
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